HBM3E
Samsung HBM3E Shinebolt
Samsung's HBM3E generation reaching 9.8 Gbps per pin and 36 GB stacks
- Manufacturer
- Samsung
- Interface
- HBM3E
- Form factor
- HBM stack (2.5D)
- Category
- High Bandwidth Memory
- Series
- HBM3E
- Status
- Mass Production
Image: samsung.com
Shinebolt HBM3E in 8-high and 12-high stacks at up to 9.8 Gbps per pin for AI training and inference accelerators.
Capacities
Overview
What this part is for
Shinebolt is Samsung's HBM3E generation, offered in 8-high 24 GB and 12-high 36 GB stacks at pin speeds up to 9.8 Gbps — over 1.25 TB/s per stack at the top bin. Samsung's NCF-based thermal-compression bonding manages warpage and heat across the taller stack.
As a second qualified source for HBM3E, Shinebolt matters to accelerator programs balancing supply risk across vendors. Samsung pairs the product with its own 2.5D packaging services for customers seeking a combined memory-and-interposer supply chain.
Datasheet
Specifications
7 rows, factory-original data
| Interface | HBM3E, 1024-bit |
|---|---|
| Stack Height | 8-high / 12-high |
| Capacity | 24 GB / 36 GB per stack |
| Data Rate | Up to 9.8 Gbps/pin |
| Bandwidth | Up to 1.25 TB/s per stack |
| Packaging | TC-NCF, TSV |
| Target | AI accelerators, HPC |
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